SSM6N56FE,LM
MOSFET 2N-CH 20V 0.8A ES6
part Number:
SSM6N56FE,LM
Alternative Model:
RB531SM-30T2R,M1MA151KT1G,SSM6L14FE(TE85L,F),FDY302NZ,SSM6N35AFE,LF,SSM3K345R,LF,SI2301CDS-T1-GE3,BLM18EG221SN1D,MT25QU512ABB8ESF-0SIT,SSM3J331R,LF,SSM6L56FE,LM,VZ30C1T8219732L,LM4040D41IDBZR,EZA-EG2A50AX,MAX40203AUK+T
manufacturer:
Toshiba Electronic Devices and Storage Corporation
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET 2N-CH 20V 0.8A ES6
RoHS:
YES
SSM6N56FE,LM specifications
Mounting Type:
Surface Mount
Operating Temperature:
150°C (TJ)
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
Power - Max:
150mW
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
ES6
Drain to Source Voltage (Vdss):
20V
Vgs(th) (Max) @ Id:
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
1nC @ 4.5V
FET Feature:
Logic Level Gate, 1.5V Drive
Current - Continuous Drain (Id) @ 25°C:
800mA
Rds On (Max) @ Id, Vgs:
235mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
55pF @ 10V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:80192
quantity
unit price
International prices
4000
0.08
320
8000
0.08
640
12000
0.07
840
28000
0.06
1680
100000
0.05
5000
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