RGTH60TS65DGC11
IGBT TRNCH FIELD 650V 58A TO247N
part Number：
RGTH60TS65DGC11
Alternative Model：
RGTH60TS65DGC13
manufacturer：
ROHM Semiconductor
category：
Discrete Semiconductor Products >
Transistors >
IGBTs >
Single IGBTs >
describe：
IGBT TRNCH FIELD 650V 58A TO247N
RoHS：
YES
RGTH60TS65DGC11 specifications
Mounting Type：
Through Hole
Operating Temperature：
-40°C ~ 175°C (TJ)
IGBT Type：
Trench Field Stop
Input Type：
Standard
Package / Case：
TO-247-3
Voltage - Collector Emitter Breakdown (Max)：
650 V
Vce(on) (Max) @ Vge, Ic：
2.1V @ 15V, 30A
Supplier Device Package：
TO-247N
Current - Collector Pulsed (Icm)：
120 A
Test Condition：
400V, 30A, 10Ohm, 15V
Current - Collector (Ic) (Max)：
58 A
Reverse Recovery Time (trr)：
58 ns
Power - Max：
194 W
Gate Charge：
58 nC
Td (on/off) @ 25°C：
27ns/105ns
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2046
quantity
unit price
International prices
1
3.61
3.61
30
2.86
85.8
120
2.45
294
510
2.18
1111.8
1020
1.87
1907.4
2010
1.76
3537.6
5010
1.69
8466.9
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