C2M0160120D
SICFET N-CH 1200V 19A TO247-3
part Number：
C2M0160120D
Alternative Model：
C2M0040120D,C2M0280120D,C2M0080120D,IXFH40N85X,20021221-00060T4LF,03540101ZXGY,C3D16065D,C3M0120065K,C3M0120065D,C2M0025120D,150060RS75000,RP-1212D,MMSZ5253C-E3-08,NTHL160N120SC1,C3M0040120D,MGJ2D121505SC,MGJ2D241505SC,MGJ2D051505SC,MGJ3T12150505MC-R7,MGJ2D151505SC,MGJ3T24150505MC-R7,MGJ3T05150505MC-R7,MGJ3T12150505MC-R13,MGJ3T24150505MC-R13,MGJ3T05150505MC-R13
manufacturer：
Wolfspeed
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
SICFET N-CH 1200V 19A TO247-3
RoHS：
YES
C2M0160120D specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-247-3
Supplier Device Package：
TO-247-3
Power Dissipation (Max)：
125W (Tc)
Drain to Source Voltage (Vdss)：
1200 V
Drive Voltage (Max Rds On, Min Rds On)：
20V
Technology：
SiCFET (Silicon Carbide)
Vgs (Max)：
+25V, -10V
Current - Continuous Drain (Id) @ 25°C：
19A (Tc)
Vgs(th) (Max) @ Id：
2.5V @ 500µA
Rds On (Max) @ Id, Vgs：
196mOhm @ 10A, 20V
Gate Charge (Qg) (Max) @ Vgs：
32.6 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
527 pF @ 800 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：3324
quantity
unit price
International prices
1
15.91
15.91
30
12.88
386.4
120
12.12
1454.4
510
10.98
5599.8
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