C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
part Number：
C2M1000170D
Alternative Model：
MGJ2D121505SC,MGJ2D241505SC,MGJ2D051505SC,MGJ3T12150505MC-R7,MGJ2D151505SC,MGJ3T24150505MC-R7,MGJ3T05150505MC-R7,MGJ3T12150505MC-R13,MGJ3T24150505MC-R13,MGJ3T05150505MC-R13,C2M1000170J,G2R1000MT17D,SICW1000N170A-BP,IXTH2N170D2,MSC750SMA170B,WA-T247-101E,DN2540N5-G,MSC750SMA170B4,C3M0120065K,IXDN609SI,UF3C065030K3S,2N2222A,BZT52C20TQ-7-F,ACNT-H79A-500E,UCC28C43QDRQ1
manufacturer：
Wolfspeed
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
SICFET N-CH 1700V 4.9A TO247-3
RoHS：
YES
C2M1000170D specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-247-3
Supplier Device Package：
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)：
20V
Technology：
SiCFET (Silicon Carbide)
Vgs (Max)：
+25V, -10V
Vgs(th) (Max) @ Id：
4V @ 500µA
Power Dissipation (Max)：
69W (Tc)
Drain to Source Voltage (Vdss)：
1700 V
Current - Continuous Drain (Id) @ 25°C：
4.9A (Tc)
Rds On (Max) @ Id, Vgs：
1.1Ohm @ 2A, 20V
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
191 pF @ 1000 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：2269
quantity
unit price
International prices
1
11.37
11.37
30
9.08
272.4
120
8.12
974.4
510
7.17
3656.7
1020
6.45
6579
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