PMDPB38UNE,115
MOSFET 2N-CH 20V 4A 6HUSON
part Number：
PMDPB38UNE,115
Alternative Model：
manufacturer：
NXP Semiconductors
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
FET, MOSFET Arrays >
describe：
MOSFET 2N-CH 20V 4A 6HUSON
RoHS：
YES
PMDPB38UNE,115 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
FET Feature：
Logic Level Gate
Operating Temperature：
-55°C ~ 150°C (TJ)
Configuration：
2 N-Channel (Dual)
Vgs(th) (Max) @ Id：
1V @ 250µA
Package / Case：
6-UDFN Exposed Pad
Drain to Source Voltage (Vdss)：
20V
Current - Continuous Drain (Id) @ 25°C：
4A
Power - Max：
510mW
Supplier Device Package：
6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs：
4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs：
46mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
268pF @ 10V
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Standard Pack Quantity：1600
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