CSD87312Q3E

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CSD87312Q3E

MOSFET 2N-CH 30V 27A 8VSON

part Number：

CSD87312Q3E

Alternative Model：

FDMD86100,CSD17308Q3,CSD87503Q3E,CSD25402Q3A,CSD87503Q3ET,LTC4365ITS8#TRMPBF,LM5116MHX/NOPB,STM32L031K6U6,CSD85312Q3E,TMUX1574RSVR,SIZF5300DT-T1-GE3,SSM6N35AFE,LF,100SXV6R8M,SC16IS762IBS,128,LTC4425EDD#TRPBF

manufacturer：

Texas Instruments

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 30V 27A 8VSON

RoHS：

YES

：

CSD87312Q3E CSD87312Q3E CSD87312Q3E

CSD87312Q3E specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Drain to Source Voltage (Vdss)：

30V

Operating Temperature：

-55°C ~ 150°C (TJ)

Package / Case：

8-PowerTDFN

Vgs(th) (Max) @ Id：

1.3V @ 250µA

Configuration：

2 N-Channel (Dual) Common Source

Gate Charge (Qg) (Max) @ Vgs：

8.2nC @ 4.5V

Power - Max：

2.5W

Supplier Device Package：

8-VSON (3.3x3.3)

Input Capacitance (Ciss) (Max) @ Vds：

1250pF @ 15V

Current - Continuous Drain (Id) @ 25°C：

27A

Rds On (Max) @ Id, Vgs：

33mOhm @ 7A , 8V

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：3055

quantity

unit price

International prices

2500

0.59

1475

5000

0.56

2800

12500

0.54

6750

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