BSM120D12P2C005
MOSFET 2N-CH 1200V 120A MODULE
part Number:
BSM120D12P2C005
Alternative Model:
BSM250D17P2E004,BSM180D12P3C007,BSM300D12P2E001,CAB008M12GM3,BSM120C12P2C201,CCB021M12FM3,BSM180D12P2E002,BSM300D12P3E005,CAS120M12BM2,BSM400D12P3G002,CAB400M12XM3,APTMC120AM25CT3AG,BSM600D12P3G001,NXH004P120M3F2PTHG,MSCSM120TAM11CTPAG
manufacturer:
ROHM Semiconductor
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
MOSFET 2N-CH 1200V 120A MODULE
RoHS:
YES
BSM120D12P2C005 specifications
Package / Case:
Module
Operating Temperature:
-40°C ~ 150°C (TJ)
Supplier Device Package:
Module
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
Silicon Carbide (SiC)
Configuration:
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Vgs(th) (Max) @ Id:
2.7V @ 22mA
Input Capacitance (Ciss) (Max) @ Vds:
14000pF @ 10V
Power - Max:
780W
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1613
quantity
unit price
International prices
1
395.22
395.22
12
380.36
4564.32
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