BSM180D12P2C101
SIC 2N-CH 1200V 204A MODULE
part Number:
BSM180D12P2C101
Alternative Model:
BSM180D12P3C007,BSM120C12P2C201,BSM180C12P3C202,BSM180D12P2E002,BSM250D17P2E004,CAS350M12BM3,BSM120D12P2C005,CAB425M12XM3,BSM600D12P3G001,BSM300D12P2E001,BSM080D12P2C008,TAS5431QPWPRQ1,BSM300C12P3E201,WAS530M12BM3,CAB008A12GM3T
manufacturer:
ROHM Semiconductor
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >
describe:
SIC 2N-CH 1200V 204A MODULE
RoHS:
YES
BSM180D12P2C101 specifications
Package / Case:
Module
Operating Temperature:
-40°C ~ 150°C (TJ)
Supplier Device Package:
Module
Technology:
Silicon Carbide (SiC)
Configuration:
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
204A (Tc)
Vgs(th) (Max) @ Id:
4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds:
23000pF @ 10V
Power - Max:
1130W
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:1601
quantity
unit price
International prices
1
472.16
472.16
12
454.41
5452.92
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