CSD86360Q5D

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CSD86360Q5D

MOSFET 2N-CH 25V 50A 8LSON

part Number：

CSD86360Q5D

Alternative Model：

ISL95808IRZ-T,DRV8889QPWPRQ1,2171820001,TMP275AQDGKRQ1,SS4-10-3.00-L-D-K-TR,MAX20078AUE+,SEAFC-20-5.0-L-10-2-K-TR,PCA9306DCUR,SN74HCS138PWR,CSD88584Q5DC,MPM3610GQV-Z,PHB2UEETS1A,PI4ULS5V202XVEX,ISL95869IRTZ,2301996-7

manufacturer：

Texas Instruments

category：

Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays >

describe：

MOSFET 2N-CH 25V 50A 8LSON

RoHS：

YES

：

CSD86360Q5D CSD86360Q5D CSD86360Q5D CSD86360Q5D

CSD86360Q5D specifications

Mounting Type：

Surface Mount

Technology：

MOSFET (Metal Oxide)

FET Feature：

Logic Level Gate

Operating Temperature：

-55°C ~ 150°C (TJ)

Configuration：

2 N-Channel (Half Bridge)

Vgs(th) (Max) @ Id：

2.1V @ 250µA

Drain to Source Voltage (Vdss)：

25V

Package / Case：

8-PowerLDFN

Current - Continuous Drain (Id) @ 25°C：

50A

Supplier Device Package：

8-LSON (5x6)

Gate Charge (Qg) (Max) @ Vgs：

12.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds：

2060pF @ 12.5

Power - Max：

13W

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Quick inquiry

Manufacturer's standard delivery time：be pending

Standard Pack Quantity：14780

quantity

unit price

International prices

2500

1.26

3150

5000

1.21

6050

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