SI7489DP-T1-GE3
MOSFET P-CH 100V 28A PPAK SO-8
part Number：
SI7489DP-T1-GE3
Alternative Model：
ADC128S102CIMT,SIR871DP-T1-GE3,B260S1F-7,BSS123LT1G,SI7489DP-T1-E3,MAX16833CAUE+,BZT52H-C18,115,MINIASMDC030F-2,SMF33A-E3-18,SIR870DP-T1-GE3,N2510-6002-RB,LTST-C190KGKT,SI7115DN-T1-GE3,SN74LVC1G17DBVR,LT3754EUH#PBF
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET P-CH 100V 28A PPAK SO-8
RoHS：
YES
SI7489DP-T1-GE3 specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Vgs(th) (Max) @ Id：
3V @ 250µA
Supplier Device Package：
PowerPAK® SO-8
Package / Case：
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C：
28A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
160 nC @ 10 V
Rds On (Max) @ Id, Vgs：
41mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
4600 pF @ 50 V
Power Dissipation (Max)：
5.2W (Ta), 83W (Tc)
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：9549
quantity
unit price
International prices
3000
1.15
3450
6000
1.11
6660
9000
1.07
9630
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