SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8SO
part Number:
SI4126DY-T1-GE3
Alternative Model:
LTC4353IMS#PBF,TMP435ADGSR,LM3150MH/NOPB,IRF7862TRPBF,SS36-E3/57T,FMMT624TA,LTC2977IUP#PBF,LFSPXO066657,EXC-34CG900U,LT1511CSW#PBF,LT4295HUFD#PBF,DG211BDY-T1-E3,ECS-2018-500-BN,ADUM1281BRZ-RL7,ACS732KLATR-75AB-T
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 30V 39A 8SO
RoHS:
YES
SI4126DY-T1-GE3 specifications
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Package / Case:
8-SOIC (0.154", 3.90mm Width)
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
30 V
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
Power Dissipation (Max):
3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs:
2.75mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
4405 pF @ 15 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:5462
quantity
unit price
International prices
2500
1.07
2675
5000
1.03
5150
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