SIA456DJ-T1-GE3
MOSFET N-CH 200V 2.6A PPAK SC70
part Number：
SIA456DJ-T1-GE3
Alternative Model：
NCV7520MWTXG,SI4090DY-T1-GE3,SIA446DJ-T1-GE3,NRVTSA4100T3G,TPN2010FNH,L1Q,SI4056DY-T1-GE3,SIS892DN-T1-GE3,SIB456DK-T1-GE3,V2P6-M3/H,ADUM7441CRQZ-RL7,SI4816BDY-T1-GE3,XLUGR34M,SISB46DN-T1-GE3,MBR1H100SFT3G,SI7818DN-T1-E3
manufacturer：
Vishay / Siliconix
category：
Discrete Semiconductor Products >
Transistors >
FETs, MOSFETs >
Single FETs, MOSFETs >
describe：
MOSFET N-CH 200V 2.6A PPAK SC70
RoHS：
YES
SIA456DJ-T1-GE3 specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Drain to Source Voltage (Vdss)：
200 V
Vgs (Max)：
±16V
Current - Continuous Drain (Id) @ 25°C：
2.6A (Tc)
Vgs(th) (Max) @ Id：
1.4V @ 250µA
Package / Case：
PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs：
14.5 nC @ 10 V
Power Dissipation (Max)：
3.5W (Ta), 19W (Tc)
Supplier Device Package：
PowerPAK® SC-70-6
Rds On (Max) @ Id, Vgs：
1.38Ohm @ 750mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
350 pF @ 100 V
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Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：17800
quantity
unit price
International prices
3000
0.37
1110
6000
0.35
2100
9000
0.34
3060
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