2N7002ET1G
MOSFET N-CH 60V 260MA SOT23-3
part Number:
2N7002ET1G
Alternative Model:
2N7002ET3G,2N7002ET7G,BAT54HT1G,0878311420,BC856BLT1G,DMN63D8L-7,B540C-13-F,LTST-C171GKT,0039281063,DCX124EK-7-F,SZMM3Z12VST1G,MM3Z3V6T1G,US1M-13-F,LTST-C171KGKT,1050170001,CSD25402Q3A,BZT52C16-7-F
manufacturer:
Sanyo Semiconductor/onsemi
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 60V 260MA SOT23-3
RoHS:
YES
2N7002ET1G specifications
Mounting Type:
Surface Mount
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
260mA (Ta)
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 240mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds:
26.7 pF @ 25 V
Power Dissipation (Max):
300mW (Tj)
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:517760
quantity
unit price
International prices
3000
0.04
120
6000
0.04
240
9000
0.03
270
30000
0.03
900
75000
0.03
2250
150000
0.02
3000
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