SI3442BDV-T1-E3
MOSFET N-CH 20V 3A 6TSOP
part Number:
SI3442BDV-T1-E3
Alternative Model:
AI-1027-TWT-5V-R,DMG1012T-7,RN114-2.5-02-3M3,3296W-1-502LF,MCP98243-BE/ST,LMR51430XDDCR,BQ25628RYKR,1053001200,ECS-80-20-5PX-TR,TPS62840YBGR,B72210S0351K101,EDM450AUSC0 LFG,BCR421UW6-7,36912000000,R-78E5.0-0.5
manufacturer:
Vishay / Siliconix
category:
Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs >
describe:
MOSFET N-CH 20V 3A 6TSOP
RoHS:
YES
SI3442BDV-T1-E3 specifications
Mounting Type:
Surface Mount
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:
6-TSOP
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Operating Temperature:
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Gate Charge (Qg) (Max) @ Vgs:
5 nC @ 4.5 V
Power Dissipation (Max):
860mW (Ta)
Rds On (Max) @ Id, Vgs:
57mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
295 pF @ 10 V
Quick inquiry
Manufacturer's standard delivery time:be pending
Standard Pack Quantity:27091
quantity
unit price
International prices
3000
0.22
660
6000
0.2
1200
9000
0.19
1710
30000
0.19
5700
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