SCT019H120G3AG
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation (Max) | 555W (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Supplier Device Package | HU3PAK |
| Vgs (Max) | +18V, -5V |
| Vgs(th) (Max) @ Id | 4.2V @ 2.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 121 nC @ 18 V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 50A, 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 800 V |