ISG0614N06NM5HATMA1

Part Number:
ISG0614N06NM5HATMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET 2N-CH 60V 31A 10VITFN
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Drain to Source Voltage (Vdss) 60V
Configuration 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V
Package / Case 10-PowerVDFN
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 233A (Tc)
Vgs(th) (Max) @ Id 3.3V @ 86µA
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 30V
Power - Max 3W (Ta), 167W (Tc)
Supplier Device Package PG-VITFN-10-1