IPW65R040CM8XKSA1
Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 25A, 10V |
| Power Dissipation (Max) | 329W (Tc) |
| Supplier Device Package | PG-TO247-3-U06 |
| Vgs(th) (Max) @ Id | 4.7V @ 680µA |
| Input Capacitance (Ciss) (Max) @ Vds | 3796 pF @ 400 V |