IPG20N10S4L35AATMA1
Product Attributes
| Part Status | Active |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Package / Case | 8-PowerVDFN |
| Drain to Source Voltage (Vdss) | 100V |
| Mounting Type | Surface Mount, Wettable Flank |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Power - Max | 43W |
| Supplier Device Package | PG-TDSON-8-10 |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |