IPDQ65R008CM8XTMA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Package / Case | 22-PowerBSOP Module |
| Supplier Device Package | PG-HDSOP-22 |
| Vgs(th) (Max) @ Id | 4.7V @ 3.24mA |
| Power Dissipation (Max) | 1.249kW (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 125A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 18004 pF @ 400 V |