IPB051N15NM6ATMA1

Part Number:
IPB051N15NM6ATMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
TRENCH >=100V
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss) 150 V
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Supplier Device Package PG-TO263-3-2
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 75 V
Vgs(th) (Max) @ Id 4V @ 131µA
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 139A (Tc)
Power Dissipation (Max) 3.8W (Ta), 234W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 15V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 58A, 15V