IPB021N10NM5LF2ATMA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 17000 pF @ 50 V |
| Vgs(th) (Max) @ Id | 3.9V @ 280µA |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 176A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 15V |