IMW65R020M2HXKSA1
IMW65R020M2HXKSA1 is a Infineon Technologies electronic component in Single FETs, MOSFETs. Specifications: SILICON CARBIDE MOSFET. Purchasing and R&D teams can check this part numb
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Apex-Chip Electronics Co., Ltd. supplies integrated circuits (ICs), resistors, capacitors, inductors and diodes from stock. Open a part number to see the brand and specifications, then request a quote for quantity and lead time. Genuine stock is confirmed when you inquire.
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Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation (Max) | 273W (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -7V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 18 V |
| Supplier Device Package | PG-TO247-3-40 |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 46.9A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 9.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2038 pF @ 400 V |