FF6MR12W2M1PB11BPSA1
Product Attributes
| Part Status | Obsolete |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power - Max | - |
| Configuration | 2 N-Channel (Dual) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |