FF6MR12W2M1HB11BPSA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Package / Case | Module |
| Power - Max | - |
| Supplier Device Package | Module |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Configuration | 2 N-Channel (Half Bridge) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 145A (Tj) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 150A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 60mA |
| Gate Charge (Qg) (Max) @ Vgs | 446nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 800V |