FF3MR12KM1HHPSA1

Part Number:
FF3MR12KM1HHPSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET 2N-CH 1200V 190A AG62MMHB
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Chassis Mount
FET Feature -
Grade -
Qualification -
Package / Case Module
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Configuration 2 N-Channel (Half Bridge)
Technology Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 190A (Tc)
Supplier Device Package AG-62MMHB
Rds On (Max) @ Id, Vgs 4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id 5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs 800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 24200pF @ 800V