DF11MR12W1M1B11BOMA1
Product Attributes
| Part Status | Obsolete |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Package / Case | Module |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power - Max | - |
| Configuration | 2 N-Channel (Dual) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Vgs(th) (Max) @ Id | 5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
| Supplier Device Package | AG-EASY1BM-2 |