AIMDQ75R025M2HXTMA1

Part Number:
AIMDQ75R025M2HXTMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
AIMDQ75R025M2HXTMA1
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Power Dissipation (Max) 272W (Tc)
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
Vgs (Max) +23V, -7V
Package / Case 22-PowerBSOP Module
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 18 V
Supplier Device Package PG-HDSOP-22
Drain to Source Voltage (Vdss) 840 V
Rds On (Max) @ Id, Vgs 22mOhm @ 36.7A, 20V
Vgs(th) (Max) @ Id 5.6V @ 8.1mA
Input Capacitance (Ciss) (Max) @ Vds 1729 pF @ 500 V