SCT055TO65G3

Part Number:
SCT055TO65G3
Manufacturer:
STMicroelectronics
Other Part Numbers:
-
Description:
SILICON CARBIDE POWER MOSFET 650
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Operating Temperature -65°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 234W (Tc)
Package / Case 8-PowerSFN
Supplier Device Package TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Vgs (Max) +18V, -5V
Rds On (Max) @ Id, Vgs 72mOhm @ 15A, 18V
Input Capacitance (Ciss) (Max) @ Vds 687 pF @ 400 V