MSC360SMA120SDT/R

Part Number:
MSC360SMA120SDT/R
Manufacturer:
Microchip Technology
Other Part Numbers:
-
Description:
MOSFET SIC 1200 V 360 MOHM TO-26
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-263-7
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 92W (Tc)
Technology SiCFET (Silicon Carbide)
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
Vgs (Max) +23V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 20V
Input Capacitance (Ciss) (Max) @ Vds 258 pF @ 1.2 kV