MSC025SMA330B4N
Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 800W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) | +23V, -10V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 410 nC @ 20 V |
| Vgs(th) (Max) @ Id | 5V @ 7mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7080 pF @ 2400 V |