IQDH29NE2LM5SCATMA1

Part Number:
IQDH29NE2LM5SCATMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
OPTIMOS POWER MOSFETS 25 V - 150
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs (Max) ±16V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 4.5 V
Drain to Source Voltage (Vdss) 25 V
Package / Case 8-PowerWDFN
Current - Continuous Drain (Id) @ 25°C 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs 0.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 1.448mA
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 12 V
Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
Supplier Device Package PG-WHSON-8-U02