IPQC60T022S7XTMA1

Part Number:
IPQC60T022S7XTMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
HIGH POWER_NEW
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Power Dissipation (Max) 416W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 22mOhm @ 23A, 12V
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 12 V
Supplier Device Package PG-HDSOP-22-1
Package / Case 22-PowerBSOP Module
Input Capacitance (Ciss) (Max) @ Vds 5640 pF @ 300 V
Vgs(th) (Max) @ Id 4.5V @ 1.43mA