IPD70N10S3L12ATMA2

Part Number:
IPD70N10S3L12ATMA2
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET_(75V 120V(
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Power Dissipation (Max) 125W (Tc)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2.4V @ 83µA
Input Capacitance (Ciss) (Max) @ Vds 5550 pF @ 25 V