IPD35N12S3L24ATMA2

Part Number:
IPD35N12S3L24ATMA2
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
MOSFET_(120V 300V)
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 71W (Tc)
Rds On (Max) @ Id, Vgs 24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.4V @ 39µA
Input Capacitance (Ciss) (Max) @ Vds 2691 pF @ 25 V