IPD35N10S3L26ATMA2
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Supplier Device Package | PG-TO252-3-11 |
| Power Dissipation (Max) | 71W (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 39µA |