IPB035N10NF2SATMA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 80A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 50 V |
| Power Dissipation (Max) | 3.8W (Ta), 214W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 151A (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 113µA |
| Supplier Device Package | PG-TO263-3-8 |