IPAN60R180CM8XKSA1

Part Number:
IPAN60R180CM8XKSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
IPAN60R180CM8XKSA1
Datasheet:
PDF

Product Attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Package / Case TO-220-3 Full Pack
Power Dissipation (Max) 25W (Tc)
Supplier Device Package PG-TO220 Full Pack
Current - Continuous Drain (Id) @ 25°C 8A (Tj)
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4.7V @ 140µA
Input Capacitance (Ciss) (Max) @ Vds 743 pF @ 400 V