IMZA75R016M1HXKSA1
Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | PG-TO247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 750 V |
| Power Dissipation (Max) | 319W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tj) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 41.5A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 14.9mA |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2869 pF @ 500 V |