IMZA65R007M2HXKSA1

Part Number:
IMZA65R007M2HXKSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
SILICON CARBIDE MOSFET
Datasheet:
-

Product Attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Power Dissipation (Max) 625W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc)
Package / Case TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
Vgs (Max) +23V, -7V
Supplier Device Package PG-TO247-4-U02
Rds On (Max) @ Id, Vgs 6.1mOhm @ 146.3A, 20V
Vgs(th) (Max) @ Id 5.6V @ 29.7mA
Gate Charge (Qg) (Max) @ Vgs 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 6359 pF @ 400 V