IMWH170R1K0M1XKSA1
Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 70W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Vgs (Max) | 15V, 12V |
| Supplier Device Package | PG-TO247-3-U04 |
| Rds On (Max) @ Id, Vgs | 880mOhm @ 1A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 233 pF @ 1000 V |