IMW65R060M2HXKSA1
Product Attributes
| Mounting Type | Through Hole |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-247-3 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 130W (Tc) |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Vgs (Max) | +23V, -7V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Supplier Device Package | PG-TO247-3-40 |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 15.4A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 669 pF @ 400 V |
| Current - Continuous Drain (Id) @ 25°C | 32.8A (Tc) |