IMBG65R009M1HXTMA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Supplier Device Package | PG-TO263-7 |
| Technology | SiCFET (Silicon Carbide) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Power Dissipation (Max) | 555W (Tc) |
| Vgs (Max) | +23V, -5V |
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 97.2A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 32.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6054 pF @ 400 V |