IGT65R035D2ATMA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 167W (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Technology | GaNFET (Gallium Nitride) |
| Package / Case | 8-PowerSFN |
| Vgs (Max) | -10V |
| Supplier Device Package | PG-HSOF-8 |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 400 V |
| Vgs(th) (Max) @ Id | 1.6V @ 4.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 3 V |