IGOT65R055D2AUMA1

Part Number:
IGOT65R055D2AUMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
IGOT65R055D2AUMA1
Datasheet:
-

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 89W (Tc)
Rds On (Max) @ Id, Vgs -
Drive Voltage (Max Rds On, Min Rds On) -
Technology GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Vgs (Max) -10V
Package / Case 20-BFSOP (0.295", 7.50mm Width)
Supplier Device Package PG-DSO-20-91
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 400 V