GS66516BMRXUSA1
Product Attributes
| Part Status | Last Time Buy |
|---|---|
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Package / Case | Die |
| Supplier Device Package | Die |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Technology | GaNFET (Gallium Nitride) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | +7V, -10V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 18A, 6V |
| Vgs(th) (Max) @ Id | 1.3V @ 14mA |
| Gate Charge (Qg) (Max) @ Vgs | 12.1 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 400 V |