GS61008PMRXUSA1

Part Number:
GS61008PMRXUSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
GS61008P-MR
Datasheet:
PDF

Product Attributes

Part Status Last Time Buy
Mounting Type Surface Mount
Supplier Device Package -
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
FET Feature -
Grade -
Qualification -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Package / Case 5-SMD, No Lead
Technology GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 6 V
Vgs (Max) +7V, -10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id 2.6V @ 7mA