GS0650116LMRXUSA1

Part Number:
GS0650116LMRXUSA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
GS-065-011-6-L-MR
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) -
Drain to Source Voltage (Vdss) 700 V
Package / Case 8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C 12.2A (Tc)
Technology GaNFET (Gallium Nitride)
Supplier Device Package 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On) 6V
Vgs (Max) +7V, -10V
Rds On (Max) @ Id, Vgs 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id 2.6V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 400 V