FS55MR12W1M1HB11NPSA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| FET Feature | - |
| Package / Case | Module |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Supplier Device Package | AG-EASY1B |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tj) |
| Configuration | 6 N-Channel (Full Bridge) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 800V |