F3L6MR20W2M1HB70BPSA1
Product Attributes
| Part Status | Active |
|---|---|
| Mounting Type | Chassis Mount |
| Supplier Device Package | - |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Package / Case | Module |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 297nC @ 18V |
| Drain to Source Voltage (Vdss) | 2000V (2kV) |
| Vgs(th) (Max) @ Id | 5.15V @ 112mA |
| Input Capacitance (Ciss) (Max) @ Vds | 24100pF @ 1.2kV |
| Current - Continuous Drain (Id) @ 25°C | 155A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 100A, 18V |