AIMCQ120R160M1TXTMA1

Part Number:
AIMCQ120R160M1TXTMA1
Manufacturer:
Infineon Technologies
Other Part Numbers:
-
Description:
SIC_DISCRETE
Datasheet:
PDF

Product Attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Power Dissipation (Max) 125W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 18.6A (Tc)
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Package / Case 22-PowerBSOP Module
Rds On (Max) @ Id, Vgs 200mOhm @ 5A, 20V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 800 V
Supplier Device Package PG-HDSOP-22
Vgs(th) (Max) @ Id 5.1V @ 1.5mA